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| Preliminary data SPP06N80C2 Cool MOSTM Power Transistor Feature * * * * * * C OLMOS O Power Semiconductors New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved noise immunity Product Summary VDS RDS(on) ID 800 900 6 P-TO220-3-1 V mW A Type SPP06N80C2 Package P-TO220-3-1 Ordering Code Q67040-S4351 Marking SPP06N80C2 Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Continuous drain current TC = 25 C TC = 100 C Symbol Value 6 3.8 18 230 0.2 6 6 20 83 -55... +150 Unit A ID Pulsed drain current, tp limited by T jmax Avalanche energy, single pulse ID=1.5A, V DD=50V ID puls EAS EAR IAR dv/dt mJ Avalanche energy, repetitive t AR limited by Tjmax1) ID=6A, V DD=50V Avalanche current, repetitive tAR limited by Tjmax Reverse diode dv/dt IS=6A, VDS < VDD, di/dt=100A/s, T jmax=150C A V/ns V W C Gate source voltage Power dissipation TC = 25 C VGS Ptot Tj , Tstg Page 1 Operating and storage temperature 2000-05-29 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Linear derating factor Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at T j = 25 C, unless otherwise specified Static Characteristics Drain-source breakdown voltage V GS=0V, ID=0.25mA SPP06N80C2 Symbol min. Values typ. max. 1.5 62 0.67 260 Unit RthJC RthJA Tsold - K/W W/K C V(BR)DSS V(BR)DS VGS(th) IDSS 800 2 870 3 4 V Drain-source avalanche breakdown voltage V GS=0V, ID=6A Gate threshold voltage, VGS = VDS ID=250A Zero gate voltage drain current V DS = 800 V, V GS = 0 V, T j = 25 C V DS = 800 V, V GS = 0 V, T j = 150 C A 0.5 780 0.7 10 100 100 900 nA mW Gate-source leakage current V GS=20V, V DS=0V IGSS RDS(on) RG Drain-source on-state resistance V GS=10V, I D=3.8A, T j=25C Gate input resistance W f = 1 MHz, open drain 1Repetitve avalanche causes additional power losses that can be calculated as P =E *f. AR AV Page 2 2000-05-29 Preliminary data Electrical Characteristics , at Tj = 25 C, unless otherwise specified Parameter Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance energy related Effective output capacitance, 2) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Symbol Conditions min. SPP06N80C2 Values typ. 4 785 390 20 22 42 25 15 48 8 max. 60 13 Unit g fs Ciss Coss Crss V DS2*ID*R DS(on)max , ID=3.8A V GS=0V, VDS=25V, f=1MHz - S pF Effective output capacitance, 1) Co(er) V GS=0V, V DS=0V to 640 V pF t d(on) tr t d(off) tf V DD=400V, VGS=0/10V, ID=6A, RG=12W, T j=125C - ns Q gs Q gd Qg V DD=640V, ID=6A - 2.5 9.8 19.4 6 25 - nC V DD=640V, ID=6A, V GS=0 to 10V V(plateau) V DD=640V, ID=6A V 1C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 2C is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . o(tr) oss DS DSS Page 3 2000-05-29 Preliminary data Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Reverse Diode Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Symbol Conditions min. SPP06N80C2 Values typ. 1 520 5 17 400 max. 6 18 1.2 - Unit IS I SM VSD t rr Q rr T C=25C - A V GS=0V, IF=IS V R=400V, I F=I S , diF/dt=100A/s - V ns C A A/s Peak reverse recovery current I rrm Peak rate of fall of reverse di rr/dt recovery current Transient Thermal Characteristics Symbol Value typ. Transient thermal impedance Thermal resistance Unit Symbol Value typ. Unit Thermal capacitance 0.023 0.033 0.067 0.189 0.208 0.076 K/W Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.000135 0.000438 0.000313 0.00149 0.00738 0.068 Ws/K Tj P tot (t) R th1 R th,n T case E xternal H eatsink C th1 C th2 C th,n T am b Page 4 2000-05-29 Preliminary data 1 Power dissipation 2 Drain current SPP06N80C2 Ptot = f (TC) SPP06N80C2 ID = f (TC ) parameter: VGS 10 V SPP06N80C2 100 6.5 W 80 70 A 5.5 5.0 4.5 Ptot ID 20 40 60 80 100 120 60 50 4.0 3.5 3.0 40 30 20 10 0 0 2.5 2.0 1.5 1.0 0.5 C 160 0.0 0 20 40 60 80 100 120 C 160 TC TC 3 Safe operating area 4 Transient thermal impedance I D = f ( V DS ) parameter : D = 0 , T C=25C 10 2 ZthJC = f (tp ) parameter : D = tp /T 10 1 SPP06N80C2 SPP06N80C2 K/W A tp = 32.0s 10 0 10 1 Z thJC 10 -1 ID V DS /I 100 s D 10 -2 D = 0.50 0.20 1 ms 10 0 R DS ( on ) = 10 -3 0.10 0.05 0.02 10 ms 10 -4 single pulse 0.01 10 -1 0 10 10 1 10 2 V DC 10 3 10 -5 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 5 tp 2000-05-29 Preliminary data 5 Typ. output characteristic SPP06N80C2 6 Typ. output characteristic I D = f (VDS); T j=25C parameter: tp = 10 s, V GS 20 ID = f (VDS ); Tj=150C parameter: tp = 10 s, VGS 11 A 16 14 20V 10V 8V A 9 8 20V 10V 8V 7V ID ID 12 10 7V 7 6V 6 5 8 6V 5.5V 4 3 2 5V 4.5V 4V 6 4 2 0 0 5V 1 5 10 15 20 V 30 0 0 5 10 15 20 V 30 VDS VDS 7 Typ. drain-source on resistance 8 Drain-source on-state resistance RDS(on)=f(ID) parameter: Tj=150C, V GS 5.0 RDS(on) = f (Tj ) parameter : ID = 3.8 A, VGS = 10 V SPP06N80C2 W 4V 5V 6V W RDS(on) 4.5V 5.5V 5.5 4.5 4.0 3.5 3.0 2.5 RDS(on) 4.0 3.5 3.0 2.5 2.0 7V 8V 10V 20V 2.0 1.5 98% 1.0 1.5 0.5 1.0 0 2 4 6 8 typ A ID 11 0.0 -60 -20 20 60 100 C 180 Tj Page 6 2000-05-29 Preliminary data 9 Typ. transfer characteristics SPP06N80C2 10 Gate threshold voltage I D= f ( VGS ); V DS 2 x ID x R DS(on)max parameter: tp = 10 s 20 VGS(th) = f (Tj) parameter: VGS = VDS , ID = 250 A 5.0 A 25C V 4.0 16 V GS(th) 14 3.5 3.0 2.5 max. ID 12 10 8 6 4 2 0 0 150C typ. 2.0 1.5 1.0 0.5 0.0 -60 min. 2 4 6 8 10 12 14 16 V 20 VGS -20 20 60 100 160 C Tj 11 Typ. gate charge 12 Forward characteristics of body diode VGS = f (Q Gate) parameter: ID = 6 A pulsed SPP06N80C2 IF = f (VSD ) parameter: Tj , tp = 10 s 10 2 SPP06N80C2 16 V A 12 VGS 0,2 VDS max 10 10 1 8 6 IF 10 0 0,8 VDS max 4 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -1 0.0 2 0 0 4 8 12 16 20 24 nC 32 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 Q Gate Page 7 VSD 2000-05-29 Preliminary data 13 Avalanche SOA 14 Avalanche energy SPP06N80C2 I AR = f (tAR) par.: Tj 150 C 6.0 EAS = f (Tj ) par.: ID = 1.5 A, VDD = 50 V 250 A 5.0 4.5 mJ 200 175 150 125 100 T j(START)=25C IAR 4.0 3.5 3.0 2.5 2.0 1.5 E AS T j(START)=125C 75 50 1.0 0.5 0.0 -3 10 10 -2 25 1 2 4 10 -1 10 0 10 10 s 10 tAR 0 25 50 75 100 C 150 Tj 15 Drain-source breakdown voltage 16 Avalanche power losses V(BR)DSS = f (Tj) SPP06N80C2 PAR = f (f ) parameter: EAR =0.2mJ 200 980 V 940 W 160 140 120 100 V(BR)DSS 920 880 860 840 820 800 780 760 740 720 -60 -20 20 60 100 P AR 900 80 60 40 20 04 10 5 6 C 180 10 MHz 10 Tj Page 8 f 2000-05-29 Preliminary data 17 Typ. capacitances SPP06N80C2 18 Typ. Coss stored energy C = f (VDS) parameter: V GS=0V, f=1 MHz 10 4 Eoss=f(VDS ) 7 pF Ciss J 10 3 C E oss 10 2 5 4 Coss 3 10 1 2 Crss 1 10 0 0 100 200 300 400 500 600 V 800 VDS 0 0 100 200 300 400 500 600 V 800 VDS Definition of diodes switching characteristics Page 9 2000-05-29 Preliminary data P-TO220-3-1 P-TO220-3-1 SPP06N80C2 dimensions symbol min A B C D E F G H K L M N P T 9.70 14.88 0.65 3.55 2.60 6.00 13.00 4.35 0.38 0.95 [mm] max 10.30 15.95 0.86 3.89 3.00 6.80 14.00 4.75 0.65 1.32 min 0.3819 0.5858 0.0256 0.1398 0.1024 0.2362 0.5118 0.1713 0.0150 0.0374 [inch] max 0.4055 0.6280 0.0339 0.1531 0.1181 0.2677 0.5512 0.1870 0.0256 0.0520 2.54 typ. 4.30 4.50 1.17 2.30 1.40 2.72 0.1 typ. 0.1693 0.1772 0.0461 0.0906 0.0551 0.1071 Page 10 2000-05-29 Preliminary data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. SPP06N80C2 Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 11 2000-05-29 |
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